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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCR16/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed. * Blocking Voltage to 800 Volts * On-State Current Rating of 16 Amperes RMS * High Surge Current Capability -- 160 Amperes * Industry Standard TO-220AB Package for Ease of Design * Glass Passivated Junctions for Reliability and Uniformity
*Motorola preferred devices
MCR16 SERIES*
SCRs 16 AMPERES RMS 400 thru 800 VOLTS
A
K A
G
CASE 221A-06 (TO-220AB) Style 3
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = -40 to 125C) Symbol VDRM VRRM MCR16D MCR16M MCR16N IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 400 600 800 16 160 106 5.0 0.5 2.0 - 40 to +125 - 40 to +150 A A A2sec Watts Watts A C C Value Unit Volts
On-State RMS Current (All Conduction Angles) Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width 1.0 s, TC = 80C) Average Gate Power (t = 8.3 ms, TC = 80C) Peak Gate Current (Pulse Width 1.0 s, TC = 80C) Operating Junction Temperature Range Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds RJC RJA TL 1.5 62.5 260 C/W C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
(c) Motorola, Inc. 1995
Motorola Thyristor Device Data
1
MCR16 SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25C TJ = 125C IDRM IRRM -- -- -- -- 0.01 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage* (ITM = 32 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) Hold Current (Anode Voltage =12 V) VTM IGT VGT IH -- 2.0 0.5 4.0 -- 8.0 0.65 25 1.7 20 1.0 40 Volts mA Volts mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 25C) *Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. dv/dt 50 200 -- V/s
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
MAXIMUM AVERAGE POWER P(AV) DISSIPATION (WATTS)
125 120 115 110
22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 16 dc
a
a = Conduction
Angle
a
180 120 90 60
a = Conduction
Angle
105 100 95 90
a=30
a=30
60
90 120 180
dc
0
2
4 6 8 10 12 14 IT(AV), AVERAGE ON-STATE CURRENT (AMP)
16
Figure 1. Average Current Derating
Figure 2. Maximum On-State Power Dissipation
I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)
100 Maximum @ TJ=125 C 10 R(t) TRANSIENT THERMAL R (NORMALIZED) Typical @ TJ=25 C
1
Z qJC(t)
+ RqJC(t) @ r(t)
0.1
1
Maximum @ TJ=25 C
0.1 0.5
1 1.5 2 2.5 3 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
3.5
0.01 0.1 1 10 100 t, TIME (ms) 1000
1@ 4 10
Figure 3. On-State Characteristics
Figure 4. Transient Thermal Response
2
Motorola Thyristor Device Data
MCR16 SERIES
100 100
I L , LATCHING CURRENT (mA) 10 -40 -25 10 -40
I H, HOLDING CURRENT (mA)
-10
5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (_C)
95
110 125
-25
-10
5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C)
95
110 125
Figure 5. Typical Holding Current Versus Junction Temperature
Figure 6. Typical Latching Current Versus Junction Temperature
100 VGT , GATE TRIGGER VOLTAGE (VOLTS) -25 -10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 125
0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 -40 -25 -10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 125
I GT, GATE TRIGGER CURRENT (mA)
10
1 -40
Figure 7. Typical Gate Trigger Current Versus Junction Temperature
Figure 8. Typical Gate Trigger Voltage Versus Junction Temperature
1400 ITSM , PEAK SURGE CURRENT (AMP)
160 150 140 130 120 110 TJ 100 90 1 Cycle
1200 STATIC dv/dt (V/uS) TJ 1000
+ 125C
V PK
+800 V
800
600
+ 125C f + 60Hz
2 3 4 5 6 7 NUMBER OF CYCLES 8 9 10
400 10
100 1000 RGK, GATE CATHODE RESISTANCE (OHMS)
1@10 4
1
Figure 9. Typical Exponential Static dv/dt Versus Gate Cathode Resistance. Motorola Thyristor Device Data
Figure 10. Maximum Non-Repetitive Surge Current 3
MCR16 SERIES
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
STYLE 3: PIN 1. 2. 3. 4.
H Z L V G D N R J
CATHODE ANODE GATE ANODE
CASE 221A-06 (TO-220AB)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
4
*MCR16/D*
Motorola Thyristor Device Data
MCR16/D

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